TY - JOUR
T1 - TaN thin film fabricated by the magnetron sputtering with medium vacuum
AU - Hashizume, T.
AU - Saiki, A.
AU - Terayama, K.
PY - 2013
Y1 - 2013
N2 - TaN thin film is attractive material such as a diffusion barrier coating, resistance films, line material in LSI and used in electronics industry. In this study, TaN thin film was deposited on (001) silicon wafer substrates by reactive sputtering in medium vacuum condition for reducing power energy costs. N2/Ar gas mass flow rate was ranged from 9 to 23% at N2 gas. For 9 % N2 gas flow rate, crystalline fcc-TaN was obtained by XRD. Calculating lattice parameter of TaN crystals with (001), (101) and (111) orientation, a, b, c-axil were increased from ICDD data. Amorphous like TaN thin films were obtained at other rate range. TaN layer having columnar structure was observed in these films.
AB - TaN thin film is attractive material such as a diffusion barrier coating, resistance films, line material in LSI and used in electronics industry. In this study, TaN thin film was deposited on (001) silicon wafer substrates by reactive sputtering in medium vacuum condition for reducing power energy costs. N2/Ar gas mass flow rate was ranged from 9 to 23% at N2 gas. For 9 % N2 gas flow rate, crystalline fcc-TaN was obtained by XRD. Calculating lattice parameter of TaN crystals with (001), (101) and (111) orientation, a, b, c-axil were increased from ICDD data. Amorphous like TaN thin films were obtained at other rate range. TaN layer having columnar structure was observed in these films.
KW - Film deposition
KW - Magnetron Reactive sputtering
KW - Medium vacuum system
KW - Microstructure
KW - Tantalum nitride
UR - http://www.scopus.com/inward/record.url?scp=84876591568&partnerID=8YFLogxK
M3 - 学術論文
AN - SCOPUS:84876591568
SN - 0004-881X
VL - 49
SP - 76
EP - 78
JO - Journal of the Australian Ceramic Society
JF - Journal of the Australian Ceramic Society
IS - 1
ER -