TY - JOUR
T1 - Investigation of the inverted ZnCuInS/ZnS based quantum-dot light-emitting diode fabricated by sputtered ZnO film layers
AU - Biswas, Mohammad Mostafizur Rahman
AU - Okada, Hiroyuki
N1 - Publisher Copyright:
© 2020 ITE and SID.
PY - 2021/12/9
Y1 - 2021/12/9
N2 - The performance of the fabricated QLED (Quantum dot Light Emitting Diode) was measured, using the sputtered ZnO film. The thickness of the ZnO film was varied to control the electron mobility. Consequently, the maximum current efficiency of 3.96 cd/A, and EQE 2.13% was achieved for the commercially available ZnCuInS/ZnS based QLEDs at yellow emission.
AB - The performance of the fabricated QLED (Quantum dot Light Emitting Diode) was measured, using the sputtered ZnO film. The thickness of the ZnO film was varied to control the electron mobility. Consequently, the maximum current efficiency of 3.96 cd/A, and EQE 2.13% was achieved for the commercially available ZnCuInS/ZnS based QLEDs at yellow emission.
KW - Cadmium-free quantum dot light emitting diodes (QLED)
KW - Inverted structure
KW - Quantum yield (QY)
KW - Sputtered Zinc Oxide
UR - http://www.scopus.com/inward/record.url?scp=85113826687&partnerID=8YFLogxK
M3 - 会議記事
AN - SCOPUS:85113826687
SN - 1883-2490
VL - 27
SP - 427
EP - 428
JO - Proceedings of the International Display Workshops
JF - Proceedings of the International Display Workshops
T2 - 27th International Display Workshops, IDW 2020
Y2 - 9 December 2020 through 11 December 2020
ER -