TY - JOUR
T1 - Cd-free quantum-dot light-emitting diode with a mixed single layer to improve the flatness of current efficiency
AU - Biswas, Mohammad Mostafizur Rahman
AU - Okada, Hiroyuki
N1 - Publisher Copyright:
© 2021 SID.
PY - 2021
Y1 - 2021
N2 - The performance of the Cd-free quantum-dot light emitting diode (QLED) was investigated by mixing the hole and electron transport materials with the emission layer. With an optimized mixing ratio of the hole transport and electron transport materials, the current efficiency of 4.2 cd/A and EQE of 2.2% was achieved using the ZnCuInS/ZnS-based QLED at yellow emission. Additionally, after optimizing the mixing ratios, the carrier injection is balanced, so the current efficiency is constant for wide current densities.
AB - The performance of the Cd-free quantum-dot light emitting diode (QLED) was investigated by mixing the hole and electron transport materials with the emission layer. With an optimized mixing ratio of the hole transport and electron transport materials, the current efficiency of 4.2 cd/A and EQE of 2.2% was achieved using the ZnCuInS/ZnS-based QLED at yellow emission. Additionally, after optimizing the mixing ratios, the carrier injection is balanced, so the current efficiency is constant for wide current densities.
KW - Cadmium-free QLED
KW - Heterostructure device
KW - Inverted structure
KW - Sputtered zinc oxide
UR - http://www.scopus.com/inward/record.url?scp=85113899233&partnerID=8YFLogxK
U2 - 10.1002/sdtp.14850
DO - 10.1002/sdtp.14850
M3 - 会議記事
AN - SCOPUS:85113899233
SN - 0097-966X
VL - 52
SP - 967
EP - 970
JO - Digest of Technical Papers - SID International Symposium
JF - Digest of Technical Papers - SID International Symposium
IS - 1
T2 - 58th International Symposium on Digest of Technical Papers, ICDT 2021
Y2 - 17 May 2021 through 21 May 2021
ER -