Thickness and roughness analysis on YSZ/Si(001) epitaxial films with ultra thin SiO2 interface by X-ray reflectivity

Chun Hua Chen; Naoki Wakiya; Atsushi Saiki; Kazuo Shinozaki; Nobuyasu Mizutani

Thickness and roughness analysis on YSZ/Si(001) epitaxial films with ultra thin SiO₂ interface by X-ray reflectivity

Chun Hua Chen^*, Naoki Wakiya, Atsushi Saiki, Kazuo Shinozaki, Nobuyasu Mizutani

^*Corresponding author for this work

Materials Design and Engineering

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

In this paper, the various thickness of YSZ epitaxial thin films were prepared by PLD. We determined the thickness and roughness of each layer of YSZ/SiO₂/Si by X-ray reflectivity (XRR, one method of the GIXA) and were conformed the results of several techniques including XPS, XRF, EDS and surface profile meter. We found that the YSZ thickness was proportional to deposition time and SiO₂ would achieve a stable thickness about 3.0 nm. The average roughness of YSZ surface and SiO₂/Si interface was about 0.2 nm and the YSZ/SiO₂ interface was vary from 0.15 nm to about 1.5 nm.

Original language	English
Pages (from-to)	121-124
Number of pages	4
Journal	Key Engineering Materials
Issue number	181-182
State	Published - 2000

Keywords

Reflectivity
Roughness
SiO
Silicon
Thickness
X-Ray
YSZ

ASJC Scopus subject areas

General Materials Science
Mechanics of Materials
Mechanical Engineering

Cite this

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title = "Thickness and roughness analysis on YSZ/Si(001) epitaxial films with ultra thin SiO2 interface by X-ray reflectivity",

abstract = "In this paper, the various thickness of YSZ epitaxial thin films were prepared by PLD. We determined the thickness and roughness of each layer of YSZ/SiO2/Si by X-ray reflectivity (XRR, one method of the GIXA) and were conformed the results of several techniques including XPS, XRF, EDS and surface profile meter. We found that the YSZ thickness was proportional to deposition time and SiO2 would achieve a stable thickness about 3.0 nm. The average roughness of YSZ surface and SiO2/Si interface was about 0.2 nm and the YSZ/SiO2 interface was vary from 0.15 nm to about 1.5 nm.",

keywords = "Reflectivity, Roughness, SiO, Silicon, Thickness, X-Ray, YSZ",

author = "Chen, {Chun Hua} and Naoki Wakiya and Atsushi Saiki and Kazuo Shinozaki and Nobuyasu Mizutani",

year = "2000",

language = "英語",

pages = "121--124",

journal = "Key Engineering Materials",

issn = "1013-9826",

publisher = "Trans Tech Publications",

number = "181-182",

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TY - JOUR

T1 - Thickness and roughness analysis on YSZ/Si(001) epitaxial films with ultra thin SiO2 interface by X-ray reflectivity

AU - Chen, Chun Hua

AU - Wakiya, Naoki

AU - Saiki, Atsushi

AU - Shinozaki, Kazuo

AU - Mizutani, Nobuyasu

PY - 2000

Y1 - 2000

N2 - In this paper, the various thickness of YSZ epitaxial thin films were prepared by PLD. We determined the thickness and roughness of each layer of YSZ/SiO2/Si by X-ray reflectivity (XRR, one method of the GIXA) and were conformed the results of several techniques including XPS, XRF, EDS and surface profile meter. We found that the YSZ thickness was proportional to deposition time and SiO2 would achieve a stable thickness about 3.0 nm. The average roughness of YSZ surface and SiO2/Si interface was about 0.2 nm and the YSZ/SiO2 interface was vary from 0.15 nm to about 1.5 nm.

AB - In this paper, the various thickness of YSZ epitaxial thin films were prepared by PLD. We determined the thickness and roughness of each layer of YSZ/SiO2/Si by X-ray reflectivity (XRR, one method of the GIXA) and were conformed the results of several techniques including XPS, XRF, EDS and surface profile meter. We found that the YSZ thickness was proportional to deposition time and SiO2 would achieve a stable thickness about 3.0 nm. The average roughness of YSZ surface and SiO2/Si interface was about 0.2 nm and the YSZ/SiO2 interface was vary from 0.15 nm to about 1.5 nm.

KW - Reflectivity

KW - Roughness

KW - SiO

KW - Silicon

KW - Thickness

KW - X-Ray

KW - YSZ

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M3 - 学術論文

AN - SCOPUS:0033715089

SN - 1013-9826

SP - 121

EP - 124

JO - Key Engineering Materials

JF - Key Engineering Materials

IS - 181-182