Abstract
TaN thin film is attractive material such as a diffusion barrier coating, resistance films, line material in LSI and used in electronics industry. In this study, TaN thin film was deposited on (001) silicon wafer substrates by reactive sputtering in medium vacuum condition for reducing power energy costs. N2/Ar gas mass flow rate was ranged from 9 to 23% at N2 gas. For 9 % N2 gas flow rate, crystalline fcc-TaN was obtained by XRD. Calculating lattice parameter of TaN crystals with (001), (101) and (111) orientation, a, b, c-axil were increased from ICDD data. Amorphous like TaN thin films were obtained at other rate range. TaN layer having columnar structure was observed in these films.
| Original language | English |
|---|---|
| Pages (from-to) | 76-78 |
| Number of pages | 3 |
| Journal | Journal of the Australian Ceramic Society |
| Volume | 49 |
| Issue number | 1 |
| State | Published - 2013 |
Keywords
- Film deposition
- Magnetron Reactive sputtering
- Medium vacuum system
- Microstructure
- Tantalum nitride
ASJC Scopus subject areas
- Ceramics and Composites
- Materials Chemistry