Residual strain analysis of epitaxial grown SBT thin films prepared by MOCVD

Keisuke Saito; Katsuyuki Ishikawa; Atsushi Saiki; Isao Yamaji; Takao Akai; Hiroshi Funakubo

doi:10.1080/10584580108222288

Residual strain analysis of epitaxial grown SBT thin films prepared by MOCVD

Keisuke Saito^*, Katsuyuki Ishikawa, Atsushi Saiki, Isao Yamaji, Takao Akai, Hiroshi Funakubo

^*Corresponding author for this work

Materials Design and Engineering

Research output: Contribution to journal › Conference article › peer-review

11 Scopus citations

Abstract

Epitaxial SrBi₂Ta₂O₉ (SBT) films were prepared on (001) and (110) SrTiO₃ single crystal substrates by MOCVD. High-resolution X-ray Diffractometer was employed to characterize its crystalline quality and residual strain after the deposition. (001)- and (116)-oriented SBT thin films growth on (001) and (110) STO substrates were ascertained by XRD analysis. The lattice parameters of epitaxial SBT thin films were obtained by X-ray Reciprocal Space Mapping measurements. It was found that the lattice parameters were almost identical with those of bulk crystal in spite of the large lattice mismatch between SBT thin film and STO substrate.

Original language	English
Pages (from-to)	59-69
Number of pages	11
Journal	Integrated Ferroelectrics
Volume	33
Issue number	1-4
DOIs	https://doi.org/10.1080/10584580108222288
State	Published - 2001
Event	12th International Symposium on Integrated Ferroelectrics - Aachen, Germany Duration: 2000/03/12 → 2000/03/15

Keywords

Epitaxial
MOCVD
Reciprocal space mapping
SrBiTaO
XRD

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Control and Systems Engineering
Ceramics and Composites
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1080/10584580108222288

Cite this

@article{9a4cb55e60c2495a919b293f9faba87a,

title = "Residual strain analysis of epitaxial grown SBT thin films prepared by MOCVD",

abstract = "Epitaxial SrBi2Ta2O9 (SBT) films were prepared on (001) and (110) SrTiO3 single crystal substrates by MOCVD. High-resolution X-ray Diffractometer was employed to characterize its crystalline quality and residual strain after the deposition. (001)- and (116)-oriented SBT thin films growth on (001) and (110) STO substrates were ascertained by XRD analysis. The lattice parameters of epitaxial SBT thin films were obtained by X-ray Reciprocal Space Mapping measurements. It was found that the lattice parameters were almost identical with those of bulk crystal in spite of the large lattice mismatch between SBT thin film and STO substrate.",

keywords = "Epitaxial, MOCVD, Reciprocal space mapping, SrBiTaO, XRD",

author = "Keisuke Saito and Katsuyuki Ishikawa and Atsushi Saiki and Isao Yamaji and Takao Akai and Hiroshi Funakubo",

year = "2001",

doi = "10.1080/10584580108222288",

language = "英語",

volume = "33",

pages = "59--69",

journal = "Integrated Ferroelectrics",

issn = "1058-4587",

publisher = "Taylor and Francis Ltd.",

number = "1-4",

note = "12th International Symposium on Integrated Ferroelectrics ; Conference date: 12-03-2000 Through 15-03-2000",

}

TY - JOUR

T1 - Residual strain analysis of epitaxial grown SBT thin films prepared by MOCVD

AU - Saito, Keisuke

AU - Ishikawa, Katsuyuki

AU - Saiki, Atsushi

AU - Yamaji, Isao

AU - Akai, Takao

AU - Funakubo, Hiroshi

PY - 2001

Y1 - 2001

N2 - Epitaxial SrBi2Ta2O9 (SBT) films were prepared on (001) and (110) SrTiO3 single crystal substrates by MOCVD. High-resolution X-ray Diffractometer was employed to characterize its crystalline quality and residual strain after the deposition. (001)- and (116)-oriented SBT thin films growth on (001) and (110) STO substrates were ascertained by XRD analysis. The lattice parameters of epitaxial SBT thin films were obtained by X-ray Reciprocal Space Mapping measurements. It was found that the lattice parameters were almost identical with those of bulk crystal in spite of the large lattice mismatch between SBT thin film and STO substrate.

AB - Epitaxial SrBi2Ta2O9 (SBT) films were prepared on (001) and (110) SrTiO3 single crystal substrates by MOCVD. High-resolution X-ray Diffractometer was employed to characterize its crystalline quality and residual strain after the deposition. (001)- and (116)-oriented SBT thin films growth on (001) and (110) STO substrates were ascertained by XRD analysis. The lattice parameters of epitaxial SBT thin films were obtained by X-ray Reciprocal Space Mapping measurements. It was found that the lattice parameters were almost identical with those of bulk crystal in spite of the large lattice mismatch between SBT thin film and STO substrate.

KW - Epitaxial

KW - MOCVD

KW - Reciprocal space mapping

KW - SrBiTaO

KW - XRD

UR - http://www.scopus.com/inward/record.url?scp=0035037119&partnerID=8YFLogxK

U2 - 10.1080/10584580108222288

DO - 10.1080/10584580108222288

M3 - 会議記事

AN - SCOPUS:0035037119

SN - 1058-4587

VL - 33

SP - 59

EP - 69

JO - Integrated Ferroelectrics

JF - Integrated Ferroelectrics

IS - 1-4

T2 - 12th International Symposium on Integrated Ferroelectrics

Y2 - 12 March 2000 through 15 March 2000

ER -

Residual strain analysis of epitaxial grown SBT thin films prepared by MOCVD

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Fingerprint

Cite this