TY - GEN
T1 - Reciprocal space map measurement of ceramics thin films for unequal lattice change at high temperature
AU - Saiki, Atsushi
AU - Miwa, Shogo
AU - Hashizume, Takashi
N1 - Publisher Copyright:
© 2020 Trans Tech Publications Ltd, Switzerland.
PY - 2020
Y1 - 2020
N2 - Ceria and zirconia are very important for their thermal, mechanical, and chemical stability, and their thin films have attracted much attention for applications such as buffer layers for growing electric devices, thermal-shield or optical coatings, corrosion-resistant coatings, oxygen sensors and ionic conductors for fuel cells. To investigate and control the thin film orientation and phase is important to improve those performances. In this study, the reciprocal space maps of CeO2/YSZ/Si(001) were obtained at high temperature by adding a heater to the sample stage. CeO2 and YSZ thin films were epitaxially grown samples. By measuring lattice constants at high temperature, it was conducted that axes of CeO2 and YSZ thin films parallel to the substrate surface showed smaller thermal coefficients than bulk reference and axes perpendicular to the surface showed larger thermal coefficients due to the underlayer and Si substrate. The distortion rate of the lattice of each film was small around at the film deposition temperature. And it could be controled the lattice parameter at the film surface by the film thickness. Therefore, when another thin film, for example, SrTiO3 is deposited on the CeO2 layer, the lattice change of CeO2 with increasing temperature may differ from that before depositing the top layer.
AB - Ceria and zirconia are very important for their thermal, mechanical, and chemical stability, and their thin films have attracted much attention for applications such as buffer layers for growing electric devices, thermal-shield or optical coatings, corrosion-resistant coatings, oxygen sensors and ionic conductors for fuel cells. To investigate and control the thin film orientation and phase is important to improve those performances. In this study, the reciprocal space maps of CeO2/YSZ/Si(001) were obtained at high temperature by adding a heater to the sample stage. CeO2 and YSZ thin films were epitaxially grown samples. By measuring lattice constants at high temperature, it was conducted that axes of CeO2 and YSZ thin films parallel to the substrate surface showed smaller thermal coefficients than bulk reference and axes perpendicular to the surface showed larger thermal coefficients due to the underlayer and Si substrate. The distortion rate of the lattice of each film was small around at the film deposition temperature. And it could be controled the lattice parameter at the film surface by the film thickness. Therefore, when another thin film, for example, SrTiO3 is deposited on the CeO2 layer, the lattice change of CeO2 with increasing temperature may differ from that before depositing the top layer.
KW - Lattice distortion
KW - Reciprocal space maps
KW - Thermal coefficients
KW - Thin film
UR - http://www.scopus.com/inward/record.url?scp=85087542412&partnerID=8YFLogxK
U2 - 10.4028/www.scientific.net/msf.985.218
DO - 10.4028/www.scientific.net/msf.985.218
M3 - 会議への寄与
AN - SCOPUS:85087542412
SN - 9783035714586
T3 - Materials Science Forum
SP - 218
EP - 222
BT - Physical Properties and Application of Advanced Materials
A2 - Matsuda, Kenji
A2 - Mai Khanh, Pham
A2 - Khanh, Dang Quoc
A2 - Lich, Le Van
PB - Trans Tech Publications Ltd
T2 - 13th International Conference on the Physical Properties and Application of Advanced Materials, ICPMAT 2018
Y2 - 4 September 2018 through 7 September 2018
ER -