Microstructure of junction interface of semiconductive SrTiO3 single crystals and change of I-V characteristics by oxidation/reduction

Osamu Sakurai; Masaru Soeda; Atsushi Saiki; Kazuo Shinozaki; Nobuyasu Mizutani

doi:10.2109/jcersj.106.308

Microstructure of junction interface of semiconductive SrTiO₃ single crystals and change of I-V characteristics by oxidation/reduction

Osamu Sakurai, Masaru Soeda, Atsushi Saiki, Kazuo Shinozaki, Nobuyasu Mizutani

Materials Design and Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Microstructure and electrical properties of La-doped semiconductive SrTiO₃ bicrystals were investigated. SrTiO₃ bicrystals having several kinds of twisted angle were prepared by hot pressing at 1662°C, 0.1 MPa for 5h in air. Angular shaped boundary layers were observed between the crystals. Many closed pores were observed at the center of boundary layers, and open pores were observed at the edge of boundary layers. Non-linear I-V characteristics across the junction of the bicrystals were measured on as prepared samples. The non-linear coefficient of the sample was relatively larger than that of a simple junction without boundary layers. The I- V characteristics of bicrystals could be changed from non-linear to linear by heating the sample in an H₂-N₂ mixed gas atmosphere. Furthermore, by heating in an O₂ atmosphere the linear I-V characteristics of the samples reversed to non-linear.

Original language	English
Pages (from-to)	308-311
Number of pages	4
Journal	Journal of the Ceramic Society of Japan
Volume	106
Issue number	3
DOIs	https://doi.org/10.2109/jcersj.106.308
State	Published - 1998

Keywords

Bicrystal
I-V characteristics
Non-linear coefficient
Semiconductive strontium titanate

ASJC Scopus subject areas

Ceramics and Composites
General Chemistry
Condensed Matter Physics
Materials Chemistry

Access to Document

10.2109/jcersj.106.308

Cite this

@article{6fa83b719f60410e96e36569f7884fec,

title = "Microstructure of junction interface of semiconductive SrTiO3 single crystals and change of I-V characteristics by oxidation/reduction",

abstract = "Microstructure and electrical properties of La-doped semiconductive SrTiO3 bicrystals were investigated. SrTiO3 bicrystals having several kinds of twisted angle were prepared by hot pressing at 1662°C, 0.1 MPa for 5h in air. Angular shaped boundary layers were observed between the crystals. Many closed pores were observed at the center of boundary layers, and open pores were observed at the edge of boundary layers. Non-linear I-V characteristics across the junction of the bicrystals were measured on as prepared samples. The non-linear coefficient of the sample was relatively larger than that of a simple junction without boundary layers. The I- V characteristics of bicrystals could be changed from non-linear to linear by heating the sample in an H2-N2 mixed gas atmosphere. Furthermore, by heating in an O2 atmosphere the linear I-V characteristics of the samples reversed to non-linear.",

keywords = "Bicrystal, I-V characteristics, Non-linear coefficient, Semiconductive strontium titanate",

author = "Osamu Sakurai and Masaru Soeda and Atsushi Saiki and Kazuo Shinozaki and Nobuyasu Mizutani",

year = "1998",

doi = "10.2109/jcersj.106.308",

language = "英語",

volume = "106",

pages = "308--311",

journal = "Journal of the Ceramic Society of Japan",

issn = "0914-5400",

publisher = "Ceramic Society of Japan",

number = "3",

}

TY - JOUR

T1 - Microstructure of junction interface of semiconductive SrTiO3 single crystals and change of I-V characteristics by oxidation/reduction

AU - Sakurai, Osamu

AU - Soeda, Masaru

AU - Saiki, Atsushi

AU - Shinozaki, Kazuo

AU - Mizutani, Nobuyasu

PY - 1998

Y1 - 1998

N2 - Microstructure and electrical properties of La-doped semiconductive SrTiO3 bicrystals were investigated. SrTiO3 bicrystals having several kinds of twisted angle were prepared by hot pressing at 1662°C, 0.1 MPa for 5h in air. Angular shaped boundary layers were observed between the crystals. Many closed pores were observed at the center of boundary layers, and open pores were observed at the edge of boundary layers. Non-linear I-V characteristics across the junction of the bicrystals were measured on as prepared samples. The non-linear coefficient of the sample was relatively larger than that of a simple junction without boundary layers. The I- V characteristics of bicrystals could be changed from non-linear to linear by heating the sample in an H2-N2 mixed gas atmosphere. Furthermore, by heating in an O2 atmosphere the linear I-V characteristics of the samples reversed to non-linear.

AB - Microstructure and electrical properties of La-doped semiconductive SrTiO3 bicrystals were investigated. SrTiO3 bicrystals having several kinds of twisted angle were prepared by hot pressing at 1662°C, 0.1 MPa for 5h in air. Angular shaped boundary layers were observed between the crystals. Many closed pores were observed at the center of boundary layers, and open pores were observed at the edge of boundary layers. Non-linear I-V characteristics across the junction of the bicrystals were measured on as prepared samples. The non-linear coefficient of the sample was relatively larger than that of a simple junction without boundary layers. The I- V characteristics of bicrystals could be changed from non-linear to linear by heating the sample in an H2-N2 mixed gas atmosphere. Furthermore, by heating in an O2 atmosphere the linear I-V characteristics of the samples reversed to non-linear.

KW - Bicrystal

KW - I-V characteristics

KW - Non-linear coefficient

KW - Semiconductive strontium titanate

UR - http://www.scopus.com/inward/record.url?scp=0032021891&partnerID=8YFLogxK

U2 - 10.2109/jcersj.106.308

DO - 10.2109/jcersj.106.308

M3 - 学術論文

AN - SCOPUS:0032021891

SN - 0914-5400

VL - 106

SP - 308

EP - 311

JO - Journal of the Ceramic Society of Japan

JF - Journal of the Ceramic Society of Japan

IS - 3

ER -