Growth of epitaxial SrBi2Ta2O9 thin films by metalorganic chemical vapor deposition

Katsuyuki Ishikawa; Atsushi Saiki; Hiroshi Funakubo

doi:10.1143/jjap.39.2102

Growth of epitaxial SrBi₂Ta₂O₉ thin films by metalorganic chemical vapor deposition

Katsuyuki Ishikawa^*, Atsushi Saiki, Hiroshi Funakubo

^*Corresponding author for this work

Materials Design and Engineering

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

Epitaxially grown SrBi₂Ta₂O₉(SBT) thin films were deposited on various types of substrates at temperatures ranging from 620 to 910°C by metalorganic chemical vapor deposition. Epitaxial SET films with (001) orientation were easily grown on perovskite- and rocksalt-structured substrates. The films tended to grow at lower deposition temperatures on the substrates, which had a lower mismatch with the film. When the film was deposited on a fluorite-structured substrate, yttria-stabilized zirconia (YSZ), it had a fluorite phase at a wide deposition temperature range. Epitaxially grown SBT film with (116) orientation was prepared on (110) SrTiO₃ substrate at 820°C. This film exhibited twinning.

Original language	English
Pages (from-to)	2102-2109
Number of pages	8
Journal	Japanese Journal of Applied Physics
Volume	39
Issue number	4 B
DOIs	https://doi.org/10.1143/jjap.39.2102
State	Published - 2000

Keywords

(001) orientation
(116) orientation
Epitaxial
MOCVD
SrBiTaO

ASJC Scopus subject areas

General Engineering
General Physics and Astronomy

Access to Document

10.1143/jjap.39.2102

Cite this

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title = "Growth of epitaxial SrBi2Ta2O9 thin films by metalorganic chemical vapor deposition",

abstract = "Epitaxially grown SrBi2Ta2O9(SBT) thin films were deposited on various types of substrates at temperatures ranging from 620 to 910°C by metalorganic chemical vapor deposition. Epitaxial SET films with (001) orientation were easily grown on perovskite- and rocksalt-structured substrates. The films tended to grow at lower deposition temperatures on the substrates, which had a lower mismatch with the film. When the film was deposited on a fluorite-structured substrate, yttria-stabilized zirconia (YSZ), it had a fluorite phase at a wide deposition temperature range. Epitaxially grown SBT film with (116) orientation was prepared on (110) SrTiO3 substrate at 820°C. This film exhibited twinning.",

keywords = "(001) orientation, (116) orientation, Epitaxial, MOCVD, SrBiTaO",

author = "Katsuyuki Ishikawa and Atsushi Saiki and Hiroshi Funakubo",

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language = "英語",

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pages = "2102--2109",

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publisher = "Japan Society of Applied Physics",

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TY - JOUR

T1 - Growth of epitaxial SrBi2Ta2O9 thin films by metalorganic chemical vapor deposition

AU - Ishikawa, Katsuyuki

AU - Saiki, Atsushi

AU - Funakubo, Hiroshi

PY - 2000

Y1 - 2000

N2 - Epitaxially grown SrBi2Ta2O9(SBT) thin films were deposited on various types of substrates at temperatures ranging from 620 to 910°C by metalorganic chemical vapor deposition. Epitaxial SET films with (001) orientation were easily grown on perovskite- and rocksalt-structured substrates. The films tended to grow at lower deposition temperatures on the substrates, which had a lower mismatch with the film. When the film was deposited on a fluorite-structured substrate, yttria-stabilized zirconia (YSZ), it had a fluorite phase at a wide deposition temperature range. Epitaxially grown SBT film with (116) orientation was prepared on (110) SrTiO3 substrate at 820°C. This film exhibited twinning.

AB - Epitaxially grown SrBi2Ta2O9(SBT) thin films were deposited on various types of substrates at temperatures ranging from 620 to 910°C by metalorganic chemical vapor deposition. Epitaxial SET films with (001) orientation were easily grown on perovskite- and rocksalt-structured substrates. The films tended to grow at lower deposition temperatures on the substrates, which had a lower mismatch with the film. When the film was deposited on a fluorite-structured substrate, yttria-stabilized zirconia (YSZ), it had a fluorite phase at a wide deposition temperature range. Epitaxially grown SBT film with (116) orientation was prepared on (110) SrTiO3 substrate at 820°C. This film exhibited twinning.

KW - (001) orientation

KW - (116) orientation

KW - Epitaxial

KW - MOCVD

KW - SrBiTaO

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DO - 10.1143/jjap.39.2102

M3 - 学術論文

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