Fermi surface of thru2si2 as a reference to the strongly correlated isostructural metals investigated by quantum oscillations

Yuji Matsumoto; Yoshinori Haga; Naoyuki Tateiwa; Haruyoshi Aoki; Noriaki Kimura; Tomoo Yamamura; Etsuji Yamamoto; Tatsuma D. Matsuda; Zachary Fisk; Hiroshi Yamagami

doi:10.7566/JPSJ.85.104709

Fermi surface of thru₂si₂ as a reference to the strongly correlated isostructural metals investigated by quantum oscillations

Yuji Matsumoto, Yoshinori Haga, Naoyuki Tateiwa, Haruyoshi Aoki, Noriaki Kimura, Tomoo Yamamura, Etsuji Yamamoto, Tatsuma D. Matsuda, Zachary Fisk, Hiroshi Yamagami

Department of Physics

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

We have successfully grown a high-quality single crystal of ThRu₂Si₂ with the residual resistivity ratio (RRR) of 120, which is a reference compound to the heavy-fermion systems CeRu2Si2 and URu₂Si₂ crystallizing in the tetragonal ThCr₂Si₂-Type structure, and observed the quantum oscillations (de Haas-van Alphen effect). The result is compared with the Fermi surfaces of CeRu₂Si₂ and URu₂Si₂ as well as the band structure calculations. The main features of Fermi surface topology of ThRu₂Si₂ are similar to those of the heavy-fermion compound CeRu2Si2, indicating that the 4 f electron in CeRu₂Si₂ contributes to the conduction band. On the other hand, the Fermi surfaces of ThRu₂Si₂ significantly differ from those obtained for URu₂Si₂, suggesting the itinerant nature of 5 f electrons rather than the conventionally assumed localized 5 f 2 configuration.

Original language	English
Article number	709
Journal	Journal of the Physical Society of Japan
Volume	85
Issue number	10
DOIs	https://doi.org/10.7566/JPSJ.85.104709
State	Published - 2016/10/15

ASJC Scopus subject areas

General Physics and Astronomy

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10.7566/JPSJ.85.104709

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title = "Fermi surface of thru2si2 as a reference to the strongly correlated isostructural metals investigated by quantum oscillations",

abstract = "We have successfully grown a high-quality single crystal of ThRu2Si2 with the residual resistivity ratio (RRR) of 120, which is a reference compound to the heavy-fermion systems CeRu2Si2 and URu2Si2 crystallizing in the tetragonal ThCr2Si2-Type structure, and observed the quantum oscillations (de Haas-van Alphen effect). The result is compared with the Fermi surfaces of CeRu2Si2 and URu2Si2 as well as the band structure calculations. The main features of Fermi surface topology of ThRu2Si2 are similar to those of the heavy-fermion compound CeRu2Si2, indicating that the 4 f electron in CeRu2Si2 contributes to the conduction band. On the other hand, the Fermi surfaces of ThRu2Si2 significantly differ from those obtained for URu2Si2, suggesting the itinerant nature of 5 f electrons rather than the conventionally assumed localized 5 f 2 configuration.",

author = "Yuji Matsumoto and Yoshinori Haga and Naoyuki Tateiwa and Haruyoshi Aoki and Noriaki Kimura and Tomoo Yamamura and Etsuji Yamamoto and Matsuda, {Tatsuma D.} and Zachary Fisk and Hiroshi Yamagami",

note = "Publisher Copyright: {\textcopyright}2016 The Physical Society of Japan.",

year = "2016",

month = oct,

day = "15",

doi = "10.7566/JPSJ.85.104709",

language = "英語",

volume = "85",

journal = "Journal of the Physical Society of Japan",

issn = "0031-9015",

publisher = "The Physical Society of Japan",

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TY - JOUR

T1 - Fermi surface of thru2si2 as a reference to the strongly correlated isostructural metals investigated by quantum oscillations

AU - Matsumoto, Yuji

AU - Haga, Yoshinori

AU - Tateiwa, Naoyuki

AU - Aoki, Haruyoshi

AU - Kimura, Noriaki

AU - Yamamura, Tomoo

AU - Yamamoto, Etsuji

AU - Matsuda, Tatsuma D.

AU - Fisk, Zachary

AU - Yamagami, Hiroshi

PY - 2016/10/15

Y1 - 2016/10/15

N2 - We have successfully grown a high-quality single crystal of ThRu2Si2 with the residual resistivity ratio (RRR) of 120, which is a reference compound to the heavy-fermion systems CeRu2Si2 and URu2Si2 crystallizing in the tetragonal ThCr2Si2-Type structure, and observed the quantum oscillations (de Haas-van Alphen effect). The result is compared with the Fermi surfaces of CeRu2Si2 and URu2Si2 as well as the band structure calculations. The main features of Fermi surface topology of ThRu2Si2 are similar to those of the heavy-fermion compound CeRu2Si2, indicating that the 4 f electron in CeRu2Si2 contributes to the conduction band. On the other hand, the Fermi surfaces of ThRu2Si2 significantly differ from those obtained for URu2Si2, suggesting the itinerant nature of 5 f electrons rather than the conventionally assumed localized 5 f 2 configuration.

AB - We have successfully grown a high-quality single crystal of ThRu2Si2 with the residual resistivity ratio (RRR) of 120, which is a reference compound to the heavy-fermion systems CeRu2Si2 and URu2Si2 crystallizing in the tetragonal ThCr2Si2-Type structure, and observed the quantum oscillations (de Haas-van Alphen effect). The result is compared with the Fermi surfaces of CeRu2Si2 and URu2Si2 as well as the band structure calculations. The main features of Fermi surface topology of ThRu2Si2 are similar to those of the heavy-fermion compound CeRu2Si2, indicating that the 4 f electron in CeRu2Si2 contributes to the conduction band. On the other hand, the Fermi surfaces of ThRu2Si2 significantly differ from those obtained for URu2Si2, suggesting the itinerant nature of 5 f electrons rather than the conventionally assumed localized 5 f 2 configuration.

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DO - 10.7566/JPSJ.85.104709

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SN - 0031-9015

VL - 85

JO - Journal of the Physical Society of Japan

JF - Journal of the Physical Society of Japan

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