Electrical Properties and Crystal Structures of Semiconductive Nb-Doped BaTiO3 Thin Film Prepared by MOCVD

D. Nagano; H. Funakubo; O. Sakurai; A. Saiki; K. Shinozaki; N. Mizutani

Electrical Properties and Crystal Structures of Semiconductive Nb-Doped BaTiO₃ Thin Film Prepared by MOCVD

D. Nagano^*, H. Funakubo, O. Sakurai, A. Saiki, K. Shinozaki, N. Mizutani

^*Corresponding author for this work

Materials Design and Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Epitaxially grown semiconductive Nb-doped BaTiO₃ thin films with a resistivity similar to single crystals were prepared by MOCVD on (001)MgO substrates at 800°C. The smooth surface and grain boundary-free structure were observed. The film had c-axis orientation, and this orientation was caused by the strain from the thermal stress of cubic BaTiO₃. The varying of conductivity was attributed to that of the carrier concentration, and the mobility was similar to that of bulk ceramics. The thermal activation energy of the film with 3.1 at% Nb was very small, 0.034 eV, and that was caused by a high carrier concentration.

Original language	English
Pages (from-to)	167-174
Number of pages	8
Journal	Key Engineering Materials
Volume	157-158
State	Published - 1999

ASJC Scopus subject areas

General Materials Science
Mechanics of Materials
Mechanical Engineering

Cite this

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title = "Electrical Properties and Crystal Structures of Semiconductive Nb-Doped BaTiO3 Thin Film Prepared by MOCVD",

abstract = "Epitaxially grown semiconductive Nb-doped BaTiO3 thin films with a resistivity similar to single crystals were prepared by MOCVD on (001)MgO substrates at 800°C. The smooth surface and grain boundary-free structure were observed. The film had c-axis orientation, and this orientation was caused by the strain from the thermal stress of cubic BaTiO3. The varying of conductivity was attributed to that of the carrier concentration, and the mobility was similar to that of bulk ceramics. The thermal activation energy of the film with 3.1 at% Nb was very small, 0.034 eV, and that was caused by a high carrier concentration.",

author = "D. Nagano and H. Funakubo and O. Sakurai and A. Saiki and K. Shinozaki and N. Mizutani",

year = "1999",

language = "英語",

volume = "157-158",

pages = "167--174",

journal = "Key Engineering Materials",

issn = "1013-9826",

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T1 - Electrical Properties and Crystal Structures of Semiconductive Nb-Doped BaTiO3 Thin Film Prepared by MOCVD

AU - Nagano, D.

AU - Funakubo, H.

AU - Sakurai, O.

AU - Saiki, A.

AU - Shinozaki, K.

AU - Mizutani, N.

PY - 1999

Y1 - 1999

N2 - Epitaxially grown semiconductive Nb-doped BaTiO3 thin films with a resistivity similar to single crystals were prepared by MOCVD on (001)MgO substrates at 800°C. The smooth surface and grain boundary-free structure were observed. The film had c-axis orientation, and this orientation was caused by the strain from the thermal stress of cubic BaTiO3. The varying of conductivity was attributed to that of the carrier concentration, and the mobility was similar to that of bulk ceramics. The thermal activation energy of the film with 3.1 at% Nb was very small, 0.034 eV, and that was caused by a high carrier concentration.

AB - Epitaxially grown semiconductive Nb-doped BaTiO3 thin films with a resistivity similar to single crystals were prepared by MOCVD on (001)MgO substrates at 800°C. The smooth surface and grain boundary-free structure were observed. The film had c-axis orientation, and this orientation was caused by the strain from the thermal stress of cubic BaTiO3. The varying of conductivity was attributed to that of the carrier concentration, and the mobility was similar to that of bulk ceramics. The thermal activation energy of the film with 3.1 at% Nb was very small, 0.034 eV, and that was caused by a high carrier concentration.

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M3 - 学術論文

AN - SCOPUS:1842830999

SN - 1013-9826

VL - 157-158

SP - 167

EP - 174

JO - Key Engineering Materials

JF - Key Engineering Materials

ER -

Electrical Properties and Crystal Structures of Semiconductive Nb-Doped BaTiO3 Thin Film Prepared by MOCVD

Abstract

ASJC Scopus subject areas

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Electrical Properties and Crystal Structures of Semiconductive Nb-Doped BaTiO₃ Thin Film Prepared by MOCVD