Deposition conditions of SrTiO3 films on various substrates by CVD and their dielectric properties

Hiroshi Funakubo; Yutaka Takeshima; Daisuke Nagano; Atsushi Saiki; Kazuo Shinozaki; Nobuyasu Mizutani

doi:10.1016/S0040-6090(98)01119-5

Deposition conditions of SrTiO₃ films on various substrates by CVD and their dielectric properties

Hiroshi Funakubo, Yutaka Takeshima, Daisuke Nagano, Atsushi Saiki, Kazuo Shinozaki, Nobuyasu Mizutani^*

^*Corresponding author for this work

Materials Design and Engineering

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

SrTiO₃ films were prepared on (100)Pt//(100)MgO and (111)Pt/glass substrates by CVD using Sr(C₁₁H₁₉O₂)₂-Ti(O · i-C₃H₇)₄-O₂ system. Epitaxially grown film was deposited on (100)Pt//(100)MgO substrate at 800°C, (100)SrTiO₃//(100)Pt//(100)MgO. On the other hand, (100)-one-axis oriented film was deposited on (111)Pt/glass substrate. These films were made up of columnar grains grown normal to the surface of the substrate. The dielectric constant (ε_r) of these films were approx. 220-240 and decreased to 90% with increasing temperature from 20 to 130°C. Their dispersion factors were within 0.5-1.5%. The ε_r of the films deposited at 730°C was approx. 30 for both films and was approximately one-seventh smaller than that deposited at 800°C.

Original language	English
Pages (from-to)	71-76
Number of pages	6
Journal	Thin Solid Films
Volume	334
Issue number	1-2
DOIs	https://doi.org/10.1016/S0040-6090(98)01119-5
State	Published - 1998/12/04

Keywords

Dielectric property
Orientation
Strontium titanate

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Access to Document

10.1016/S0040-6090(98)01119-5

Cite this

@article{23370d76cfa541d89f2040622368f25b,

title = "Deposition conditions of SrTiO3 films on various substrates by CVD and their dielectric properties",

abstract = "SrTiO3 films were prepared on (100)Pt//(100)MgO and (111)Pt/glass substrates by CVD using Sr(C11H19O2)2-Ti(O · i-C3H7)4-O2 system. Epitaxially grown film was deposited on (100)Pt//(100)MgO substrate at 800°C, (100)SrTiO3//(100)Pt//(100)MgO. On the other hand, (100)-one-axis oriented film was deposited on (111)Pt/glass substrate. These films were made up of columnar grains grown normal to the surface of the substrate. The dielectric constant (εr) of these films were approx. 220-240 and decreased to 90% with increasing temperature from 20 to 130°C. Their dispersion factors were within 0.5-1.5%. The εr of the films deposited at 730°C was approx. 30 for both films and was approximately one-seventh smaller than that deposited at 800°C.",

keywords = "Dielectric property, Orientation, Strontium titanate",

author = "Hiroshi Funakubo and Yutaka Takeshima and Daisuke Nagano and Atsushi Saiki and Kazuo Shinozaki and Nobuyasu Mizutani",

year = "1998",

month = dec,

day = "4",

doi = "10.1016/S0040-6090(98)01119-5",

language = "英語",

volume = "334",

pages = "71--76",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier B.V.",

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TY - JOUR

T1 - Deposition conditions of SrTiO3 films on various substrates by CVD and their dielectric properties

AU - Funakubo, Hiroshi

AU - Takeshima, Yutaka

AU - Nagano, Daisuke

AU - Saiki, Atsushi

AU - Shinozaki, Kazuo

AU - Mizutani, Nobuyasu

PY - 1998/12/4

Y1 - 1998/12/4

N2 - SrTiO3 films were prepared on (100)Pt//(100)MgO and (111)Pt/glass substrates by CVD using Sr(C11H19O2)2-Ti(O · i-C3H7)4-O2 system. Epitaxially grown film was deposited on (100)Pt//(100)MgO substrate at 800°C, (100)SrTiO3//(100)Pt//(100)MgO. On the other hand, (100)-one-axis oriented film was deposited on (111)Pt/glass substrate. These films were made up of columnar grains grown normal to the surface of the substrate. The dielectric constant (εr) of these films were approx. 220-240 and decreased to 90% with increasing temperature from 20 to 130°C. Their dispersion factors were within 0.5-1.5%. The εr of the films deposited at 730°C was approx. 30 for both films and was approximately one-seventh smaller than that deposited at 800°C.

AB - SrTiO3 films were prepared on (100)Pt//(100)MgO and (111)Pt/glass substrates by CVD using Sr(C11H19O2)2-Ti(O · i-C3H7)4-O2 system. Epitaxially grown film was deposited on (100)Pt//(100)MgO substrate at 800°C, (100)SrTiO3//(100)Pt//(100)MgO. On the other hand, (100)-one-axis oriented film was deposited on (111)Pt/glass substrate. These films were made up of columnar grains grown normal to the surface of the substrate. The dielectric constant (εr) of these films were approx. 220-240 and decreased to 90% with increasing temperature from 20 to 130°C. Their dispersion factors were within 0.5-1.5%. The εr of the films deposited at 730°C was approx. 30 for both films and was approximately one-seventh smaller than that deposited at 800°C.

KW - Dielectric property

KW - Orientation

KW - Strontium titanate

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DO - 10.1016/S0040-6090(98)01119-5

M3 - 学術論文

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EP - 76

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

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