Abstract
We have preformed the de Haas-van Alphen effect measurements in Ce xLa1-xRu2Si2 with magnetic fields in the (001) plane. All the oscillations corresponding to those in LaRu2Si2 can be observed in low Ce concentration samples and the evolution of the Fermi surface properties with x is found to depend strongly on the Fermi surface sheet. We show that the evolution can be attributed to anisotropic hybridization of the f electron with conduction electrons and resultant delocalization of the f electron.
Original language | English |
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Article number | 083706 |
Journal | Journal of the Physical Society of Japan |
Volume | 79 |
Issue number | 8 |
DOIs | |
State | Published - 2010/08 |
Keywords
- CeLaRuSi
- Delocalize
- Dhva effect
- Kondo effect
- Strong correlation
- f electron
ASJC Scopus subject areas
- General Physics and Astronomy