Defects in heteroepitaxial CeO₂/YSZ/Si(0 0 1) films by precise X-ray rocking curve distribution fitness

In this paper, the theory of dislocation density and curvature measurements from X-ray rocking curves is extended to the case of double oxide heteroepitaxial CeO₂(0 0 1)/YSZ(0 0 1)/Si(0 0 1) films mainly by high-resolution X-ray diffraction. According to this theory, we have successfully resolved the rocking curves of CeO₂ and YSZ by two simple components. Thus, the dislocation density and radius of curvature of each layer can be calculated from the distribution of the square of measured FWHM versus 1/sin²θ. The results show that the YSZ layer has a higher dislocation density and a lower radius of curvature than CeO₂. The high-resolution transmission electron microscopy (TEM) image of CeO₂/YSZ interface cross-section shows a high dislocation density along the interface with an average interval ∼3.9 nm.